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Temperature dependence of 4H-SiC IMPATT Diode at Ka band

Authors: Joydeep Sengupta,Girish Chandra Ghivela, Anand Gajbhiye, Bhupendra Jothe,M.Mitra

In this paper we have carried out the DC analysis of DDR structure for 4H-SiC IMPATT Diode at 36 GHz in which the efficiency, noise measure and various dc parameters at different junction temperature are computed. This paper can help to choose the best operating condition for 4H-SiC at 36GHz.

Efficiency, Noise measure, Quality factor, Electric field distribution, Avalanche voltage.

Volume 19, Issue 2, April 2014, pp. 887-891                    Download PDF

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