(pp. 240-243)


Abstract -

Article deleted due to copyright infringement.


2) Shielding Failure Analysis of 132 kV Transmission Line Shielded by Surge Arresters Associated With Multiple Strokes Lightning
(pp. 244-247)

Authors: David Caulker, Hussein Ahmad, Zulkurnain Abdul Malek, Sallehhudin Yusof  

Abstract - Analysis of shielding failure is carried out to observe flashover of insulators parallel with phase conductors of a transmission line associated with a lightning strike on phase conductor.  Peak current of different magnitude have been used to represent the multiple strokes lightning (MSL). This paper aims to simulate the worst case due to transmission shielding failure with three direct strikes to a line phase conductor of magnitudes 25 kA, 35kA, 50kA, 65 kA and 80kA per strike respectively. Insulators where flashover had occurred with respect to MSL were identified. Installation of an arrester on a phase insulator where a flashover has occurred proven to be useful mitigation technique thatch could prevent flashover of the insulator and also improves lightning performance of the line.


3) Economic Dispatch with Convex and Non-Convex Fuel Cost Functions Including Line Losses Using PS and GA Approaches
(pp. 248-252)

Author: Attia Ali El-Fergany

Abstract - This article presents an application of Generalized Patten Search (PS) and Genetic Algorithm (GA) to solve Economic Load Dispatch (ELD) problems with convex and non-convex fuel cost objective functions. Main objective is to determine the most economic generating dispatch required to satisfy the predicted load demands including line losses over a certain period of time while relaxing various equality and inequality constraints. The unit operational minimum/maximum constraints, effects of valve-point ripples and line losses are considered for the practical applications. Several cases were tested and verified, which indicate an improvement in total fuel cost savings. The robustness of the proposed methods have been assessed and investigated through comparisons with results reported in recent researches. The results are very encouraging and suggesting that both PS and GA are very useful in solving power system ELD problems efficiently with global minimum fuel cost.


4) An analytical model for sidewall parasitic capacitance of nano-scale trench isolated MOSFETs
(pp. 253-256)

Authors: Srabanti Pandit and Chandan Kumar Sarkar

Abstract - This paper presents a physics-based, analytical model for sidewall parasitic capacitance of nano-scale MOSFETs. Trench isolated MOSFETs have been considered in the 90 nm technology node. An analytical expression for the trench oxide parasitic capacitance is derived by taking into account the enhanced depletion depth caused due to gate fringing field at the trench oxide sidewalls and dopant redistribution in the channel. The sidewall parasitic capacitance is calculated using conformal mapping technique. The developed model has been validated by comparing the results predicted from the derived model with simulation data and with a similar model available in literature. It has been demonstrated that our model determines more correctly the parasitic capacitance of nano-scale devices compared to the existing model.


5)  Noise Performance of Gate Engineered Double Gate MOSFETs for Analog and RF applications.
(pp. 257-260)

Authors: N.Mohankumar, Binit Syamal, J.Shamshudeen, K.Vijayan, R.Saravanakuma, S. Baskaran, K.Bharath, S.Ravi, C. K. Sarkar

Abstract - Due to their excellent scalability and better immunity to short channel effects, Double gate MOSFETs rule the CMOS applications era. However for channel lengths below 100nm, DG MOSFETs still show considerable threshold voltage roll off and to overcome this, gate engineering technique can be widely used. In this paper, we systematically investigate the analog/RF and Noise performance of Gate engineered DG MOSFETs for System-on-chip applications. A very good improvement in noise parameters such as power spectral density and Noise figure are observed in case of DMDG devices compared to its single metal counterpart.